| PART |
Description |
Maker |
| NTE262 NTE261 |
Silicon complementary PNP transistor. Darlington power amplifier.
Silicon Complementary Transistors Darlington Power Amplifier
|
NTE[NTE Electronics]
|
| MMBTA13LT1G MMBTA13LT1G09 |
Darlington Amplifier Transistors
|
ON Semiconductor
|
| MMBTA14 |
NPN (DARLINGTON AMPLIFIER TRANSISTOR)
|
SAMSUNG[Samsung semiconductor]
|
| MMBTA13 |
NPN (DARLINGTON AMPLIFIER TRANSISTOR)
|
Samsung semiconductor
|
| LMBTA14LT3G LMBTA13LT3G LMBTA13LT1G LMBTA14LT1G |
Darlington Amplifier Transistors RoHS requirements.
|
Leshan Radio Company
|
| NTE266 |
Silicon NPN Transistor Darlington Power Amplifier
|
NTE Electronics
|
| 2SD1383KT146B |
NPN High gain amplifier Transistor (Darlington)
|
ROHM
|
| NTE251 NTE252 |
Silicon Complementary Transistors Darlington Power Amplifier
|
NTE[NTE Electronics]
|
| MMBTA13LT1 MMBTA14LT1 ON2134 |
From old datasheet system
Darlington Amplifier Transistors(NPN Silicon)
|
http://
MOTOROLA[Motorola, Inc]
ON Semiconductor
Motorola, Inc.
|
| KSD1413 KSD1413TU |
NPN Silicon Darlington Transistor
Power Amplifier Applications
|
FAIRCHILD[Fairchild Semiconductor]
http://
|
| HMC31510 315E HITTITEMICROWAVECORP-HMC315E |
GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz
|
Hittite Microwave Corporation
|
